BDX33B Datasheet - ON Semiconductor

BDX33B DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

BDX33B Features

* High DC Current Gain

* hFE = 2500 (typ.) at IC = 4.0

* Collector

* Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min)

* BDX33B, BDX334B = 100 Vdc (min)

* BDX33C, BDX334C

* Low Collector

* Emitter Saturation Voltage VCE(sat) =

Datasheet Details

BDX33B

81.40 KB

Darlington complementary silicon power transistors.

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