BDX33B - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDX33B Features
* High DC Current Gain
* hFE = 2500 (typ.) at IC = 4.0
* Collector
* Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min)
* BDX33B, BDX334B = 100 Vdc (min)
* BDX33C, BDX334C
* Low Collector
* Emitter Saturation Voltage VCE(sat) =
