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BDX34C DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

BDX34C Description

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low s.

BDX34C Features

* High DC Current Gain
* hFE = 2500 (typ. ) at IC = 4.0
* Collector
* Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min)
* BDX33B, BDX334B = 100 Vdc (min)
* BDX33C, BDX334C
* Low Collector
* Emitter Saturation Voltage VCE(sat) =

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📁 Related Datasheet

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