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BDX33C DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

BDX33C Description

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low s.

BDX33C Features

* High DC Current Gain
* hFE = 2500 (typ. ) at IC = 4.0
* Collector
* Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min)
* BDX33B, BDX334B = 100 Vdc (min)
* BDX33C, BDX334C
* Low Collector
* Emitter Saturation Voltage VCE(sat) =

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📁 Related Datasheet

  • BDX33 - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
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  • BDX33B - Darlington Complementary Silicon Power Transistors (Motorola Inc)
  • BDX33D - NPN/PNP PLASTIC POWER TRANSISTORS (CDIL)
  • BDX30 - PNP SILICON PLANAR TRANSISTORS (Siemens Semiconductor Group)
  • BDX34 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX34A - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX34B - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (STMicroelectronics)

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