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BDX54C - Plastic Medium-Power Complementary Silicon Transistors

BDX54C Description

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general *pur.

BDX54C Features

* High DC Current Gain
* hFE = 2500 (Typ) @ IC = 4.0 Adc
* Collector Emitter Sustaining Voltage
* @ 100 mAdc VCEO(sus) = 80 Vdc (Min)
* BDX53B, 54B VCEO(sus) = 100 Vdc (Min)
* BDX53C, 54C
* Low Collector
* Emitter Saturation Voltage

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📁 Related Datasheet

  • BDX54 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX54A - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX54B - PNP Transistor (Central Semiconductor)
  • BDX54F - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (STMicroelectronics)
  • BDX53 - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX53A - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX53B - Plastic Medium-Power Complementary Silicon Transistors (Motorola Inc)
  • BDX53BFP - SILICON POWER DARLINGTON TRANSISTOR (ST Microelectronics)

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Plastic Medium-Power Complementary Silicon Transistors ON Semiconductor
ON Semiconductor BDX54C-like datasheet