BU800 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.
BU801 - High Voltage Fast Darlington
(ST Microelectronics)
.
BU806 - 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS
(Motorola Inc)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BU806/D
NPN Darlington Power Transistor
This Darlington transistor is a high voltage, .
BU806 - MEDIUM VOLTAGE NPN TRANSISTORS
(ST Microelectronics)
BU806 ® BU807
MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s NPN DARLINGTONS
s LOW BASE-DRIV.
BU806 - Transistor
(Fairchild Semiconductor)
BU806/807
BU806/807
High Voltage & Fast Switching Darlington Transistor
• Using In Horizontal Output Stages of 110° Crt Video Displays • BUILT-IN SPE.
BU806 - Silicon Darlington Power Transistors
(Comset Semiconductors)
SEMICONDUCTORS
BU806
SILICON DARLINGTON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors in Darlington configuration mounte.