BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector Emitter Diode and Built in Efficient Antisaturation Network The BUL45D2G is state of art High Speed High gain BiPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications.
Therefore, there is no need to guarantee an hFE window.
It’s characteristics make it
