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BUL45D2G - Bipolar NPN Power Transistor

BUL45D2G Description

BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector *Emitter Diode and Built *in Efficient Antisatura.

BUL45D2G Features

* Low Base Drive Requirement
* High Peak DC Current Gain
* Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
* Integrated Collector
* Emitter Free Wheeling Diode
* Fully Characterized and Guaranteed Dynam

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ON Semiconductor BUL45D2G-like datasheet