BUL45D2G Datasheet - ON Semiconductor

BUL45D2G Bipolar NPN Power Transistor

BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector Emitter Diode and Built in Efficient Antisaturation Network The BUL45D2G is state of art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. It’s characteristics make it .

BUL45D2G Features

* Low Base Drive Requirement

* High Peak DC Current Gain

* Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread

* Integrated Collector

* Emitter Free Wheeling Diode

* Fully Characterized and Guaranteed Dynam

BUL45D2G-ONSemiconductor.pdf