BUL45G Datasheet - ON Semiconductor

BUL45G - NPN Silicon Power Transistor

BUL45G Features

* Improved Efficiency Due to:  Low Base Drive Requirements (High and Flat DC Current Gain hFE)  Low Power Losses (On

* State and Switching Operations)  Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ)  @ IC = 2.0 A, IB1 = IB2 = 0.4 A

* Full Characterization at 125C

Datasheet Details

BUL45G

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Npn silicon power transistor.

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