* Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE) Low Power Losses (On
* State and Switching Operations) Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ) @ IC = 2.0 A, IB1 = IB2 = 0.4 A
* Full Characterization at 125C
BUL45G
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Npn silicon power transistor.
BUL45G NPN Silicon Power Transistor High Voltage Switch-mode Series Designed for use in electronic ballast (light ballast) and in switch-mode power .
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