BUL45G Datasheet - ON Semiconductor

BUL45G NPN Silicon Power Transistor

BUL45G Features

* Improved Efficiency Due to:  Low Base Drive Requirements (High and Flat DC Current Gain hFE)  Low Power Losses (On

* State and Switching Operations)  Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ)  @ IC = 2.0 A, IB1 = IB2 = 0.4 A

* Full Characterization at 125C

Datasheet Details

BUL45G

373.12 KB

Npn silicon power transistor.

📁 Related Datasheet

BUL45 NPN Transistor (Motorola Inc)

BUL45 NPN Transistor (ON Semiconductor)

BUL45 SILICON POWER TRANSISTOR (SavantIC)

BUL45D2 NPN Transistor (Motorola Inc)

BUL45D2 NPN Transistor (ON Semiconductor)

BUL45D2G Bipolar NPN Power Transistor (ON Semiconductor)

BUL45F NPN Transistor (Motorola Inc)

BUL45F NPN Transistor (ON Semiconductor)

TAGS

BUL45G NPN Silicon Power Transistor ON Semiconductor

BUL45G Distributor