* Low Base Drive Requirement
* High Peak DC Current Gain (55 Typical) @ IC = 100 mA
* Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
* Integrated Collector
* Emitter Free Wheeling Diode
* Fully Charac
BUL45D2
Motorola Inc
444.70 KB
Npn transistor.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL45D2/D BUL45D2 Designer's ™ Data Sheet High Speed, High Gain Bipolar NPN Power Tr.
📁 Related Datasheet
BUL45D2 NPN Transistor (ON Semiconductor)
BUL45D2G Bipolar NPN Power Transistor (ON Semiconductor)
BUL45 NPN Transistor (Motorola Inc)
BUL45 NPN Transistor (ON Semiconductor)
BUL45 SILICON POWER TRANSISTOR (SavantIC)
BUL45F NPN Transistor (Motorola Inc)
BUL45F NPN Transistor (ON Semiconductor)
BUL45G NPN Silicon Power Transistor (ON Semiconductor)
BUL416 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (STMicroelectronics)
BUL416T NPN Transistor (INCHANGE)
