BUL642D2 Datasheet - ON Semiconductor

BUL642D2 High Gain Bipolar NPN Transistor

www.DataSheet4U.com BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector Emitter and Built in Efficient Antisaturation Network The BUL642D2 is a state of the art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application. A new development process brings avalanche energy capability, making the device .

BUL642D2 Features

* http://onsemi.com 3 AMPERES 825 VOLTS 75 WATTS POWER TRANSISTOR

* Low Base Drive Requirement

* High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V

* Extremely Low Storage Time Min/Max Guarantees Due to the

* H2BIP Struct

BUL642D2_ONSemiconductor.pdf