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BUL642D2 - High Gain Bipolar NPN Transistor

BUL642D2 Description

www.DataSheet4U.com BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector *Emitter and Built *in Efficient An.

BUL642D2 Features

* http://onsemi. com 3 AMPERES 825 VOLTS 75 WATTS POWER TRANSISTOR
* Low Base Drive Requirement
* High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V
* Extremely Low Storage Time Min/Max Guarantees Due to the
* H2BIP Struct

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High Gain Bipolar NPN Transistor ON Semiconductor
ON Semiconductor BUL642D2-like datasheet