BUL65B Overview
0.46 (0.018) 0.61 (0.024).
BUL65B Key Features
- Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ra
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch
- Triple Guard Rings for improved control of high voltages
- Base Pad 2
- Collector Pad 3
- Emitter
