BUL65A - HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

Seme LAB

Key Features

Multi.
base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Ring.

BUL65A high voltage high speed npn silicon power transistor by Seme LAB - Datasheet Preview

Datasheet Details

Part number	BUL65A
Manufacturer	Seme LAB
File Size	19.06 KB
Description	HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Datasheet	BUL65A Datasheet

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Other Datasheets by Seme LAB

Part Number	Description
BUL65B	NPN Transistor
BUL62A	NPN Transistor
BUL62B	NPN Transistor
BUL63B	NPN Transistor
BUL64A	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEME LAB MECHANICAL DATA Dimensions in mm 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) 123 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) BUL65A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE • FAST SWITCHING • HIGH ENERGY RATING 2.31 (0.091) Typ. 2.31 (0.091) Typ. 4.60 (0.181) Typ. 0.46 (0.018) 0.61 (0.024) 1.04 (0.041) 1.14 (0.