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CPH6354 - Power MOSFET

Datasheet Summary

Features

  • ON-resistance RDS(on)1=77mW(typ. ).
  • 4V Drive.
  • ESD Diode - Protected Gate.
  • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tj Tstg Conditions PW≤10ms, duty cycle≤1% When mounted on ceramic substrate (1500mm2×0.8mm) Val.

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Datasheet Details

Part number CPH6354
Manufacturer ON Semiconductor
File Size 550.59 KB
Description Power MOSFET
Datasheet download datasheet CPH6354 Datasheet
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Full PDF Text Transcription

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CPH6354 Power MOSFET –60V, 100mΩ, –4A, Single P-Channel www.onsemi.com Features • ON-resistance RDS(on)1=77mW(typ.) • 4V Drive • ESD Diode - Protected Gate • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tj Tstg Conditions PW≤10ms, duty cycle≤1% When mounted on ceramic substrate (1500mm2×0.8mm) Value --60 ±20 --4 --16 1.6 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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