FCH041N65F Datasheet - ON Semiconductor

N-Channel MOSFET

FCH041N65F Features

* 700 V @ TJ = 150°C

* Typ. RDS(on)) = 36 mW

* Ultra Low Gate Charge (Typ. Qg = 226 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 1278 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free and is RoHS Compliant Applications

FCH041N65F General Description

SUPERFET II MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide .

FCH041N65F Datasheet (494.99 KB)