FCH22N60N

N-Channel MOSFET

ON Semiconductor

FCH22N60N Features

* 650 V @ TJ = 150°C

* RDS(on) = 140 mW (Typ.) @ VGS = 10 V, ID = 11 A

* Ultra Low Gate Charge (Typ. Qg = 45 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free and is RoHS Compli

FCH22N60N General Description

The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super

*junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on

*resis.

FCH22N60N Datasheet (391.81 KB)

FCH22N60N Datasheet Preview — Preview of FCH22N60N PDF

Datasheet Details

Part number:

FCH22N60N

Manufacturer:

ON Semiconductor ↗

File Size:

391.81 KB

Description:

N-channel mosfet.

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FCH22N60N N-Channel MOSFET ON Semiconductor

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FCH22N60N Features

FCH22N60N General Description

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