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FCH22N60N N-Channel MOSFET

FCH22N60N Description

MOSFET * N-Channel, SUPREMOS 600 V, 22 A, 165 mW FCH22N60N .
The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super. junction (SJ) technology employing a deep trench filling proc.

FCH22N60N Features

* 650 V @ TJ = 150°C
* RDS(on) = 140 mW (Typ. ) @ VGS = 10 V, ID = 11 A
* Ultra Low Gate Charge (Typ. Qg = 45 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 196.4 pF)
* 100% Avalanche Tested
* This Device is Pb
* Free and is RoHS Compli

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N-Channel MOSFET ON Semiconductor
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