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FCH041N60E - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FCH041N60E
Manufacturer	ON Semiconductor ↗
File Size	327.82 KB
Description	N-Channel MOSFET
Datasheet	FCH041N60E-ONSemiconductor.pdf

FCH041N60E Product details

Features

650 V @ TJ = 150°C.
Typ. RDS(on) = 36 mW.
Ultra Low Gate Charge (Typ. Qg = 285 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 735 pF).
100% Avalanche Tested.
An Integrated Gate Resistor.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Jul 16, 2024 |