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FDB3632 100V 80A N-Channel MOSFET

FDB3632 Description

DATA SHEET www.onsemi.com MOSFET * Power, N-Channel, POWERTRENCH) VDSS 100 V RDS(ON) MAX 9 mW ID MAX 80 A 100 V, 80 A, 9 mW D FDH3632, .

FDB3632 Features

* RDS(ON) = 7.5 mW (Typ. ), VGS = 10 V, ID = 80 A
* Qg (tot) = 84 nC (Typ. ), VGS = 10 V
* Low Miller Charge
* Low Qrr Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* These Devices are Pb

FDB3632 Applications

* Synchronous Rectification
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parametr Conditions Value Unit VDSS Drain to Source Voltage 100 V

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100V 80A N-Channel MOSFET ON Semiconductor
ON Semiconductor FDB3632-like datasheet