FDB3632 Datasheet - ON Semiconductor

FDB3632 N-Channel MOSFET

FDB3632 Features

* RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A

* Qg (tot) = 84 nC (Typ.), VGS = 10 V

* Low Miller Charge

* Low Qrr Body Diode

* UIS Capability (Single Pulse and Repetitive Pulse)

* These Devices are Pb

* Free and are RoHS Compliant Applications

Datasheet Details

FDB3632

864.79 KB

N-channel mosfet.

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FDB3632 FDB3632 N-Channel MOSFET ON Semiconductor

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