FDC658P Datasheet - ON Semiconductor

P-Channel MOSFET

FDC658P Features

* 4 A,

* 30 V

* RDS(ON) = 0.050 W @ VGS =

* 10 V

* RDS(ON) = 0.075 W @ VGS =

* 4.5 V

* Low Gate Charge (8 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON)

* SUPERSOTt

* 6 Package: Small Foot

FDC658P General Description

This P *Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer app.

FDC658P Datasheet (266.98 KB)