Datasheet Details
| Part number | FDC658P |
|---|---|
| Manufacturer | onsemi |
| File Size | 266.98 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDC658P Datasheet
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General Description
This P
Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored to minimize the on
state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- 4 A,.
- 30 V.
- RDS(ON) = 0.050 W @ VGS =.
- 10 V.
- RDS(ON) = 0.075 W @ VGS =.
- 4.5 V.
- Low Gate Charge (8 nC Typical).
- High Performance Trench Technology for Extremely Low RDS(ON).
- SUPERSOTt.
- 6 Package: Small Footprint (72% Smaller than Standard SO.
- 8); Low Profile (1 mm Thick).
- This is a Pb.
- Free Device.