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FDG6332C Dual-Channel MOSFET

FDG6332C Description

DATA SHEET www.onsemi.com MOSFET * N & P-Channel, POWERTRENCH) 20 V FDG6332C General .
The N & P. Channel MOSFETs are produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize on. stat.

FDG6332C Features

* Q1 0.7 A, 20 V  RDS(ON) =300 mW @ VGS = 4.5 V  RDS(ON) = 400 mW @ VGS = 2.5 V
* Q2
* 0.6 A,
* 20 V  RDS(ON) = 420 mW @ VGS =
* 4.5 V  RDS(ON) = 630 mW @ VGS =
* 2.5 V
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(ON)

FDG6332C Applications

* where the bigger more expensive TSSOP
* 8 and SSOP

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Dual-Channel MOSFET ON Semiconductor
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