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FDG6332C

Dual-Channel MOSFET

FDG6332C Features

* Q1 0.7 A, 20 V  RDS(ON) =300 mW @ VGS = 4.5 V  RDS(ON) = 400 mW @ VGS = 2.5 V

* Q2

* 0.6 A,

* 20 V  RDS(ON) = 420 mW @ VGS =

* 4.5 V  RDS(ON) = 630 mW @ VGS =

* 2.5 V

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(ON)

FDG6332C General Description

The N & P

*Channel MOSFETs are produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize on

*state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small .

FDG6332C Datasheet (279.21 KB)

Preview of FDG6332C PDF

Datasheet Details

Part number:

FDG6332C

Manufacturer:

ON Semiconductor ↗

File Size:

279.21 KB

Description:

Dual-channel mosfet.

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FDG6332C Dual-Channel MOSFET ON Semiconductor

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