FDG6332C
Description
The N & P-Channel MOSFETs are produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
Key Features
- Q1 0.7 A, 20 V RDS(ON) =300 mW @ VGS = 4.5 V RDS(ON) = 400 mW @ VGS = 2.5 V
- Q2 -0.6 A, -20 V RDS(ON) = 420 mW @ VGS = -4.5 V RDS(ON) = 630 mW @ VGS = -2.5 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- SC70-6 Package: Small Footprint (51% Smaller than SSOT-6); Low Profile (1 mm Thick)
- ESD Protection Level: HBM >75 V, MM >25 V, CDM >1.5 kV
- These Devices are Pb-Free and are RoHS compliant
