FDG6332C Description
The N & P−Channel MOSFETs are produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP−8 and SSOP−6 packages are impractical.
FDG6332C Key Features
- Q1 0.7 A, 20 V
- Q2 -0.6 A, -20 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- SC70-6 Package: Small Footprint (51% Smaller than SSOT-6); Low
- ESD Protection Level: HBM >75 V, MM >25 V, CDM >1.5 kV
- These Devices are Pb-Free and are RoHS pliant