FDMA8878 N-Channel MOSFET

ON Semiconductor

Description

+ MOSFET * N-Channel, POWERTRENCH) 30 V, 9.0 A, 16 mW FDMA8878, FDMA8878-F130 General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance.

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Datasheet Specifications

Part number: FDMA8878
Manufacturer: ON Semiconductor ↗
File Size: 245.25 KB
Datasheet: FDMA8878-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A
* Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A
* High Performance Trench Technology for Extremely Low RDS(on)
* Fast Switching Speed
* Pb

Applications

* DC
* DC Buck Converters
* Load Switch in NB
* Notebook Battery Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage (Note 3) ID Drain Current Continuou

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FDMA8878 N-Channel MOSFET ON Semiconductor

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