FDMQ86530L N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) GreenBridgetSeries of High-Efficiency Bridge Rectifiers 60 V, 8 A, 17.5 mW FDMQ86530L General .
This Quad MOSFET solution provides ten. fold improvement in power dissipation over diode bridge. Max RDS(on) = 17.

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Datasheet Specifications

Part number: FDMQ86530L
Manufacturer: ON Semiconductor ↗
File Size: 310.04 KB
Datasheet: FDMQ86530L-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 17.5 mW at VGS = 10 V, ID = 8 A
* Max RDS(on) = 23 mW at VGS = 6 V, ID = 7 A
* Max RDS(on) = 25 mW at VGS = 4.5 V, ID = 6.5 A
* Substantial Efficiency Benefit in PD Solutions
* This Device is Pb
* Free, Halide Free, and RoHS Compliant App

Applications

* Active Bridge
* Diode Bridge Replacement in 24 V & 48 V AC Systems DATA SHEET www. onsemi. com Top G4 D1/D4 D3/S4 G3 S3 S3 Bottom D1/D4 D3/ S1/ S4 D2 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 MLP 4.5x5 MARKING DIAGRAM ZXYKK FDMQ 86530L Z = Assembly Plant Code XY = Data Code (Year and W

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FDMQ86530L N-Channel MOSFET ON Semiconductor

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