* General Description
* Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
* Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
* Substantial efficiency benefit in PD solutions
* RoHS Compliant This quad MOSFET solution provides ten-fold improvement in power dissipation over di
FDMQ8403 Datasheet (234.49 KB)
FDMQ8403
Fairchild Semiconductor
234.49 KB
N-channel powertrench mosfet.
FDMQ8403 N-Channel PowerTrench® MOSFET
FDMQ8403
July 2012
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET
1.
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