Datasheet4U Logo Datasheet4U.com

FDMS86368-F085 - N-Channel MOSFET

Key Features

  • Typical RDS(on) = 3.7 mW at VGS = 10 V, ID = 80 A.
  • Typical Qg(tot) = 57 nC at VGS = 10 V, ID = 80 A.
  • UIS Capability.
  • AEC.
  • Q101 Qualified.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMS86368 N-Channel PowerTrench MOSFET Fairchild Semiconductor
FDMS86368_F085 N-Channel PowerTrench MOSFET Fairchild Semiconductor
FDMS86369_F085 MOSFET Fairchild Semiconductor
FDMS86300 N-Channel MOSFET Fairchild Semiconductor
FDMS86300DC N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDMS86300DC N-Channel MOSFET
FDMS86350 N-Channel MOSFET
FDMS86101 N-Channel MOSFET
FDMS86101DC N-Channel MOSFET
FDMS86163P P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, POWERTRENCH) 80 V, 80 A, 4.5 mW FDMS86368-F085 Features • Typical RDS(on) = 3.7 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 57 nC at VGS = 10 V, ID = 80 A • UIS Capability • AEC−Q101 Qualified • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Engine Control • PowerTrain Management • Solenoid and Motor Drivers • Integrated Starter/Alternator • Primary Switch for 12 V Systems MOSFET MAXIMUM RATINGS (TJ = 25°C, Unless otherwise specified) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current (TC = 25°C) A Continuous (VGS = 10 V) (Note 1) 80 Pulsed (see Fig.