FDMT800100DC Datasheet - ON Semiconductor

N-Channel MOSFET

FDMT800100DC Features

* Max rDS(on) = 2.95 mW at VGS = 10 V, ID = 24 A

* Max rDS(on) = 4.46 mW at VGS = 6 V, ID = 19 A

* Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency

* Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery

* Low

FDMT800100DC General Description

This N *Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction *to *Ambient.

FDMT800100DC Datasheet (512.99 KB)