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FDMT800100DC N-Channel MOSFET

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Description

MOSFET - N-Channel, DUAL COOL) 88, POWERTRENCH) 100 V, 162 A, 2.95 mW FDMT800100DC General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process.

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Features

* Max rDS(on) = 2.95 mW at VGS = 10 V, ID = 24 A
* Max rDS(on) = 4.46 mW at VGS = 6 V, ID = 19 A
* Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
* Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
* Low

Applications

* OringFET / Load Switching
* Synchronous Rectification
* DC
* DC Conversion DATA SHEET www. onsemi. com VDS 100 V rDS(ON) MAX 2.95 mW @ 10 V 4.46 mW @ 6 V ID MAX 162 A Top Bottom TDFNW8 8.3 x 8.4, 2P, DUAL COOL, OPTION 2 CASE 507AR MARKING DIAGRAM Pin 1 800100 A

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