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FDMT800152DC N-Channel MOSFET

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Description

DATA SHEET www.onsemi.com MOSFET * N-Channel, POWERTRENCH), DUAL COOL) 88 150 V, 72 A, 9.0 mW FDMT800152DC General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process.

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Features

* Max RDS(on) = 9.0 mW at VGS = 10 V, ID = 13 A
* Max RDS(on) = 11.5 mW at VGS = 6 V, ID = 11 A
* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
* Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
* Low

Applications

* OringFET / Load Switching
* Synchronous Rectification
* DC
* DC Conversion Pin 1 Pin 1 G S S S S D D D D Top Bottom PQFN8 8X8, 2P (DUAL COOL 88) CASE 483AQ MARKING DIAGRAM 5HAYWZ Non
* Markable Exposed Metal Area 5H = Specific Device Code A = Ass

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