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FDMT80060DC N-Channel Power MOSFET

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Description

MOSFET * N-Channel, POWERTRENCH), DUAL COOL) 88 60 V, 292 A, 1.1 mW FDMT80060DC General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process.

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Features

* Max rDS(on) = 1.1 mW at VGS = 10 V, ID = 43 A
* Max rDS(on) = 1.3 mW at VGS = 8 V, ID = 37 A
* Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
* Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
* Low P

Applications

* OringFET / Load Switching
* Synchronous Rectification
* DC
* DC Conversion DATA SHEET www. onsemi. com VDS 60 V rDS(ON) MAX 1.1 mW @ 10 V 1.3 mW @ 8 V ID MAX 292 A Top Bottom TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 2 CASE 507AR MARKING DIAGRAM Pin 1 80060 AWLYW

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