FDMT80060DC - N-Channel Power MOSFET

ON Semiconductor

FDMT80060DC Datasheet Preview — Preview of FDMT80060DC PDF

Datasheet Details

Part number	FDMT80060DC
Manufacturer	ON Semiconductor ↗
File Size	520.45 KB
Description	N-Channel Power MOSFET
Datasheet	FDMT80060DC-ONSemiconductor.pdf

FDMT80060DC Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process.Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction to Ambient thermal resistance.

Features

Max rDS(on) = 1.1 mW at VGS = 10 V, ID = 43 A.
Max rDS(on) = 1.3 mW at VGS = 8 V, ID = 37 A.
Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency.
Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery.
Low Profile 8 x 8 mm MLP Package.
MSL1 Robust Package Design.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and RoHS Compliant.

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Published: Aug 12, 2023 |