FDN340P Description
This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and dc−dc conversion.
FDN340P Key Features
- 2 A, 20 V
- RDS(ON) = 70 mW @ VGS = -4.5 V
- RDS(ON) = 110 mW @ VGS = -2.5 V
- Low Gate Charge (7.2 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power Version of Industry Standard SOT-23 Package. Identical
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS