FFSP08120A Datasheet Text
FFSP08120A
- Silicon Carbide Schottky Diode
FFSP08120A
Silicon Carbide Schottky Diode
1200 V, 8 A Features
- Max Junction Temperature 175 °C
- Avalanche Rated 80 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
Applications
- General Purpose
- SMPS, Solar Inverter, UPS
- Power Switching Circuits
November 2016
Description
Silicon Carbide (SiC) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
1 2
TO-220-2L
1. Cathode 2. Anode
1. Cathode
2....