FFSP08120A

Silicon Carbide Schottky Diode

ON Semiconductor

FFSP08120A Features

* Max Junction Temperature 175 °C

* Avalanche Rated 80 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery Applications

* General Purpose

* SMPS, Solar In

FFSP08120A General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSP08120A Datasheet (222.62 KB)

FFSP08120A Datasheet Preview — Preview of FFSP08120A PDF

Datasheet Details

Part number:

FFSP08120A

Manufacturer:

ON Semiconductor ↗

File Size:

222.62 KB

Description:

Silicon carbide schottky diode.

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FFSP08120A Silicon Carbide Schottky Diode ON Semiconductor

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FFSP08120A Features

FFSP08120A General Description

Datasheet Details

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