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FFSP08120A Silicon Carbide Schottky Diode

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Description

FFSP08120A * Silicon Carbide Schottky Diode FFSP08120A Silicon Carbide Schottky Diode 1200 V, 8 A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175 °C
* Avalanche Rated 80 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling

Applications

* General Purpose
* SMPS, Solar Inverter, UPS

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FFSP08120A Silicon Carbide Schottky Diode ON Semiconductor
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