FGD3N60LSD Datasheet, Igbt, ON Semiconductor

✔ FGD3N60LSD Features

✔ FGD3N60LSD Application

PDF File Details

Manufacture Logo for ON Semiconductor
ON Semiconductor manufacturer logo

Part number:

FGD3N60LSD

Manufacturer:

ON Semiconductor ↗

File Size:

858.79kb

Download:

📄 Datasheet

Description:

Igbt. ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica-

Datasheet Preview: FGD3N60LSD 📥 Download PDF (858.79kb)
Page 2 of FGD3N60LSD Page 3 of FGD3N60LSD

TAGS

FGD3N60LSD
IGBT
ON Semiconductor

📁 Related Datasheet

FGD3N60LSD - IGBT (Fairchild Semiconductor)
FGD3N60LSD IGBT September 2006 FGD3N60LSD IGBT Features • High Current Capability • Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A • High .

FGD3N60UNDF - Short Circuit Rated IGBT (Fairchild Semiconductor)
FGD3N60UNDF 600 V, 3 A Short Circuit Rated FGD3N60UNDF 600 V, 3 A Short Circuit Rated IGBT Features • Short Circuit Rated 10us • High Current Capabil.

FGD3040G2-F085 - N-Channel IGBT (ON Semiconductor)
ECOSPARK)2 300 mJ, 400 V, N-Channel Ignition IGBT FGB3040G2-F085, FGD3040G2-F085, FGP3040G2-F085, FGI3040G2-F085 Features • SCIS Energy = 300 mJ at TJ.

FGD3040G2-F085C - N-Channel IGBT (ON Semiconductor)
FGD3040G2-F085C FGB3040G2-F085C EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logi.

FGD3040G2-F085V - N-Channel IGBT (ON Semiconductor)
FGD3040G2-F085V EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Dri.

FGD3040G2_F085 - N-Channel Ignition IGBT (Fairchild Semiconductor)
FGB3040G2_F085 / FGD3040G2_F085 / FGP3040G2_F085 / FGI3040G2_F085 May 2014 FGB3040G2_F085 / FGD3040G2_F085 FGP3040G2_F085 / FGI3040G2_F085 EcoSPARK.

FGD3050G2 - N-Channel IGBT (ON Semiconductor)
DATA SHEET .onsemi. ECOSPARK) II, Ignition IGBT COLLECTOR 300 mJ, 500 V, N−Channel Ignition IGBT FGD3050G2 Features • SCIS Energy = 300 mJ .

FGD3050G2V - N-Channel IGBT (ON Semiconductor)
FGD3050G2V EcoSPARK) 2 Ignition IGBT 300 mJ, 500 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • .

FGD3245G2-F085 - N-Channel IGBT (ON Semiconductor)
.

FGD3245G2-F085C - N-Channel IGBT (ON Semiconductor)
EcoSPARK) 2 Ignition IGBT 320 mJ, 450 V, N−Channel Ignition IGBT FGD3245G2-F085C Features  SCIS Energy = 320 mJ at TJ = 25C  Logic Level Gate Dri.

Stock and price

onsemi
IGBT 600V 6A TO-252AA
DigiKey
FGD3N60LSDTM-T
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts