MBR120ESF Datasheet - ON Semiconductor

MBR120ESF Surface Mount Schottky Power Rectifier

MBR120ESF, NRVB120ESF Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Beca.

MBR120ESF Features

* Guardring for Stress Protection

* Low Leakage

* 150°C Operating Junction Temperature

* Epoxy Meets UL 94 V

* 0 @ 0.12

MBR120ESF-ONSemiconductor.pdf