MBR130LSFT1G Datasheet - ON Semiconductor

MBR130LSFT1G Surface Mount Schottky Power Rectifier

Schottky Power Rectifier, Surface Mount 1.0 A, 30 V, SOD 123 Package MBR130LSFT1G, SNRVB130LSFT1G This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package.

MBR130LSFT1G Features

* Guardring for Stress Protection

* Low Forward Voltage

* 125°C Operating Junction Temperature

* Epoxy Meets UL 94 V

* Package Designed for Optimal Automated Board Assembly

* ESD Ratings: Machine Model, C Human Body Model, 3B

* NRVB P

MBR130LSFT1G-ONSemiconductor.pdf