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MBR10100-M3 - High Voltage Trench MOS Barrier Schottky Rectifier

This page provides the datasheet information for the MBR10100-M3, a member of the MBR1090-M3 High Voltage Trench MOS Barrier Schottky Rectifier family.

Datasheet Summary

Features

  • Trench MOS Schottky technology.
  • Lower power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet preview – MBR10100-M3

Datasheet Details

Part number MBR10100-M3
Manufacturer Vishay
File Size 106.50 KB
Description High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet MBR10100-M3 Datasheet
Additional preview pages of the MBR10100-M3 datasheet.

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Full PDF Text Transcription

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www.vishay.com MBR1090-M3, MBR10100-M3 Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier TMBS® TO-220AC PIN 1 PIN 2 2 1 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 10 A 90 V, 100 V 150 A 0.65 V 150 °C TO-220AC Diode variations Single die FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
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