MBR1H100SFT3G Datasheet - ON Semiconductor

MBR1H100SFT3G Surface Mount Schottky Power Rectifier

DATA SHEET www.onsemi.com Schottky Power Rectifier, Surface Mount 1.0 A, 100 V, SOD 123FL Package MBR1H100SFT3G, NRVB1H100SFT3G This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Because of its small size, it is ideal for use in p.

MBR1H100SFT3G Features

* Guardring for Stress Protection

* Low Forward Voltage

* 175°C Operating Junction Temperature

* Epoxy Meets UL 94 V

* Package Designed for Optimal Automated Board Assembly

* ESD Ratings: Machine Model, C Human Body Model, 3B

* NRVB P

MBR1H100SFT3G-ONSemiconductor.pdf