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MBR3100 Axial Lead Rectifier

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Description

Axial Lead Rectifier MBR3100 This device employs the Schottky Barrier principle in a large area metal *to *silicon power diode.State

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Features

* epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low
* voltage, high
* frequency inverters, free wheeling diodes, and polarity protection diodes. Features
* Low Reverse Current
* Low Stored Charge, Majority Carrier C

MBR3100 Distributors

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Axial Lead Rectifier ON Semiconductor
ON Semiconductor MBR3100-like datasheet