Datasheet Details
Part number:
MJD18002D2
Manufacturer:
File Size:
154.99 KB
Description:
POWER TRANSISTOR 2 AMPERES
Features
* http://onsemi.com POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS
* Low Base Drive Requirement
* High Peak DC Current Gain (55 Typical) @ IC = 100 mA
* Extremely Low Storage Time Min/Max Guarantees Due to the
MJD18002D2_ONSemiconductor.pdf
MJD18002D2, POWER TRANSISTOR 2 AMPERES
www.DataSheet4U.com MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector Emitter Diode and Built In Efficient Antisaturation Network The MJD18002D2 is a state of the art high speed, high gain bipolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications.
Therefore, there is no longer a need t
MJD18002D2 Distributor
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