MJD18002D2 Datasheet - ON Semiconductor

MJD18002D2 POWER TRANSISTOR 2 AMPERES

www.DataSheet4U.com MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector Emitter Diode and Built In Efficient Antisaturation Network The MJD18002D2 is a state of the art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no longer a need t.

MJD18002D2 Features

* http://onsemi.com POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS

* Low Base Drive Requirement

* High Peak DC Current Gain (55 Typical) @ IC = 100 mA

* Extremely Low Storage Time Min/Max Guarantees Due to the

MJD18002D2_ONSemiconductor.pdf