* Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
* Straight Lead Version in Plastic Sleeves (“
* 1” Suffix)
* Monolithic Construction With Built
* in Base
* Emitter Shunt Resistors
* High DC Current Gain
* hFE = 2500 (Typ) @ IC = 4
MJD6039T4G Datasheet (173.98 KB)
MJD6039T4G
173.98 KB
Darlington power transistors.
MJD6039, NJVMJD6039T4G
Darlington Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as out.
📁 Related Datasheet
MJD6039 SILICON POWER TRANSISTORS (Motorola)
MJD6039 Darlington Power Transistors (ON Semiconductor)
MJD6039 Silicon NPN Power Transistor (Inchange Semiconductor)
MJD6036 Silicon power Transistor (Motorola)
MJD112 Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
MJD112 Silicon NPN epitaxial planer Transistors (MCC)
MJD112 Silicon NPN Power Transistor (Inchange Semiconductor)
MJD112 NPN Silicon Darlington Transistor (Fairchild Semiconductor)
MJD112 COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS (CDIL)
MJD112 NPN Transistor (JCET)
