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MJE210, MJE200 Complementary Silicon Power Plastic Transistors

MJE210 Description

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, h.

MJE210 Features

* ăCollector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
* ăHigh DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc
* ăLow Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc =

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MJE210, MJE200. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MJE210, MJE200
Manufacturer
ON Semiconductor ↗
File Size
111.18 KB
Datasheet
MJE200-ONSemiconductor.pdf
Description
Complementary Silicon Power Plastic Transistors
Note
This datasheet PDF includes multiple part numbers: MJE210, MJE200.
Please refer to the document for exact specifications by model.

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Complementary Silicon Power Plastic Transistors ON Semiconductor
ON Semiconductor MJE210-like datasheet