MTP5P06V Datasheet - ON Semiconductor

MTP5P06V Power MOSFET

MTP5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transie.

MTP5P06V Features

* AGE (VOLTS) t, TIME (ns) 100 TJ = 25°C ID = 5 A VDD = 30 V VGS = 10 V tr td(off) 10 tf td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance IS, SOURCE CURRENT (AMPS) DRAIN

* TO

* SOURCE DIODE CHARACTERISTICS 5 4.5 TJ = 25°C

MTP5P06V Datasheet (197.97 KB)