* AGE (VOLTS) t, TIME (ns) 100 TJ = 25°C ID = 5 A VDD = 30 V VGS = 10 V tr td(off) 10 tf td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance IS, SOURCE CURRENT (AMPS) DRAIN
* TO
* SOURCE DIODE CHARACTERISTICS 5 4.5 TJ = 25°C
MTP5P06V Datasheet (197.97 KB)
MTP5P06V
197.97 KB
Power mosfet.
MTP5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P Channel TO 220 This Power MOSFET is designed to withstand high energy in the.
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