Datasheet Specifications
- Part number
- MTP5N40E
- Manufacturer
- ON Semiconductor ↗
- File Size
- 251.69 KB
- Datasheet
- MTP5N40E-ONSemiconductor.pdf
- Description
- High Energy Power FET
Description
MTP5N40E Designer’s™ Data Sheet TMOS E *FET.™ High Energy Power FET N *Channel Enhancement *Mode Silicon Gate This advanced high .
Features
* s of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 11 are present. Full or halfApplications
* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.MTP5N40E Distributors
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