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MTP5N40E High Energy Power FET

MTP5N40E Description

MTP5N40E Designer’s™ Data Sheet TMOS E *FET.™ High Energy Power FET N *Channel Enhancement *Mode Silicon Gate This advanced high .

MTP5N40E Features

* s of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 11 are present. Full or half

MTP5N40E Applications

* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Capability

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