NGB8204N Datasheet, Igbt, ON Semiconductor

NGB8204N Features

• Igbt monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever

PDF File Details

Part number:

NGB8204N

Manufacturer:

ON Semiconductor ↗

File Size:

120.49kb

Download:

📄 Datasheet

Description:

Ignition igbt.

NGB8204N Application

• Applications Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features
<

TAGS

NGB8204N

ON Semiconductor

📁 Related Datasheet

NGB8204AN - Ignition IGBT (ON Semiconductor)
NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic c.

NGB8204ANT4G - Ignition IGBT (ON Semiconductor)
NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic c.

NGB8204NT4G - Ignition IGBT (ON Semiconductor)
NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic c.

NGB8202AN - Ignition IGBT (ON Semiconductor)
NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr.

NGB8202ANT4G - Ignition IGBT (ON Semiconductor)
NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr.

NGB8202N - Ignition IGBT (ON Semiconductor)
NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr.

NGB8202NT4G - Ignition IGBT (ON Semiconductor)
NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr.

NGB8206AN - Ignition IGBT (ON Semiconductor)
NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuit.

NGB8206N - Ignition IGBT (ON Semiconductor)
NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuit.

NGB8207ABN - Ignition IGBT (ON Semiconductor)
NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circu.