NGB15T65M3DFP Datasheet - nexperia

NGB15T65M3DFP - 650V 15A trench field-stop IGBT

NGB15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

It combines carrier stored trench-gate and field-stop (FS) structures.

NGB15T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs.

This

NGB15T65M3DFP Features

* Device current is rated at 15 A

* Low conduction and switching losses

* Stable and tight parameters for easy parallel operation

* Maximum junction temperature 175 °C

* Fully rated and fast reverse recovery diode

* 5 μs short circuit withstand time

Datasheet Details

NGB15T65M3DFP

266.64 KB

650v 15a trench field-stop igbt.

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