NGB15T65M3DFP Datasheet - nexperia

NGB15T65M3DFP, 650V 15A trench field-stop IGBT

NGB15T65M3DFP 650 V, 15 A trench field-stop IGBT with full rated silicon diode Rev.1 * 6 June 2025 Product data sheet 1.General descript.
NGB15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

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Datasheet Details

Part number:

NGB15T65M3DFP

Manufacturer:

nexperia ↗

File Size:

266.64 KB

Description:

650V 15A trench field-stop IGBT

Features

* Device current is rated at 15 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction temperature 175 °C
* Fully rated and fast reverse recovery diode
* 5 μs short circuit withstand time

NGB15T65M3DFP Distributors

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NGB15T65M3DFP 650V 15A trench field-stop IGBT nexperia

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