NGB15T65M3DFP - 650V 15A trench field-stop IGBT

nexperia

NGB15T65M3DFP Description

NGB15T65M3DFP 650 V, 15 A trench field-stop IGBT with full rated silicon diode Rev.1 * 6 June 2025 Product data sheet 1.General descript.
NGB15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

NGB15T65M3DFP Features

* Device current is rated at 15 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction temperature 175 °C
* Fully rated and fast reverse recovery diode
* 5 μs short circuit withstand time

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Datasheet Details

Part number: NGB15T65M3DFP
Manufacturer: nexperia ↗
File Size: 266.64 KB
Datasheet: NGB15T65M3DFP-nexperia.pdf
Description: 650V 15A trench field-stop IGBT

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650V 15A trench field-stop IGBT nexperia

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