NGTB20N60L2TF1G Datasheet - ON Semiconductor

NGTB20N60L2TF1G, N-Channel IGBT

Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching Diode http://onsemi.com

NGTB20N60L2TF1G Datasheet Preview Page 2

Features

* IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V)
* IGBT tf=67ns typ.
* Diode VF=1.5V typ. (IF=20A)

Applications

* Power factor correction of white goods appliance
* Adaption of full isolation type package
* Enhansment type
* Maxium junction temperature Tj=175°C
* General purpose inverter Specifications Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified

NGTB20N60L2TF1G-ONSemiconductor.pdf