NSS40300DDR2G Datasheet - ON Semiconductor

NSS40300DDR2G Dual 40 V 6.0 A / Low VCE(sat) PNP Transistor

NSS40300DDR2G Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotiv.

NSS40300DDR2G Features

* http://onsemi.com 40 VOLTS 6.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 80 mW COLLECTOR 7,8 2 BASE 1 EMITTER 4 BASE 3 EMITTER COLLECTOR 5,6

* Halide Free

* This is a Pb

* Free Device MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltag

NSS40300DDR2G_ONSemiconductor.pdf