NTD360N65S3H Datasheet - ON Semiconductor

N-Channel MOSFET

NTD360N65S3H Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 296 mW

* Ultra Low Gate Charge (Typ. Qg = 17.5 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

NTD360N65S3H General Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior swit.

NTD360N65S3H Datasheet (290.49 KB)