Datasheet Details
Part number:
NTD360N65S3H
Manufacturer:
File Size:
290.49 KB
Description:
N-Channel MOSFET
Features
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 296 mW
* Ultra Low Gate Charge (Typ. Qg = 17.5 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)
* 100% Avalanche Tested
* These Devices are Pb
* Free and are RoHS Compliant Applications
NTD360N65S3H-ONSemiconductor.pdf
NTD360N65S3H, N-Channel MOSFET
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This advanced technology is tailored to minimize conduction loss, provides superior swit
NTD360N65S3H Distributor
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