NTD360N65S3H Datasheet PDF - ON Semiconductor N-Channel MOSFET Specs

NTD360N65S3H - N-Channel MOSFET

Datasheet Summary

Description

voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

700 V @ TJ = 150°C.
Typ. RDS(on) = 296 mW.
Ultra Low Gate Charge (Typ. Qg = 17.5 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 180 pF).
100% Avalanche Tested.
These Devices are Pb.
Free and are RoHS Compliant.

Datasheet Details

Part number	NTD360N65S3H
Manufacturer	ON Semiconductor
File Size	290.49 KB
Description	N-Channel MOSFET
Datasheet	NTD360N65S3H Datasheet
Additional preview pages of the NTD360N65S3H datasheet.

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Full PDF Text Transcription

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MOSFET - Power, N‐Channel, SUPERFET) III, FAST 650 V, 360 mW, 10 A NTD360N65S3H Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 296 mW • Ultra Low Gate Charge (Typ. Qg = 17.5 nC) • Low Effective Output Capacitance (Typ. Coss(eff.

Published: Apr 30, 2021 |