Part number:
NTD3808N
Manufacturer:
File Size:
90.08 KB
Description:
Power mosfet.
* ăTrench Technology
* ăLow RDS(on) to Minimize Conduction Losses
* ăLow Capacitance to Minimize Driver Losses
* ăOptimized Gate Charge to Minimize Switching Losses
* ăThese are Pb-Free Devices Applications
* ăDC-DC Converters
* ăLow Side Switching M
NTD3808N
90.08 KB
Power mosfet.
📁 Related Datasheet
NTD3813N - Power MOSFET
(ON Semiconductor)
NTD3813N
Power MOSFET
16 V, 51 A, Single N-Channel, DPAK/IPAK
Features
•ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Dri.
NTD30 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
(EDI)
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
NTD3055-094 - Power MOSFET
(ON Semiconductor)
NTD3055-094, NVD3055-094
MOSFET – Power, N-Channel, DPAK/IPAK
12 A, 60 V
Designed for low voltage, high speed switching applications in power
suppl.
NTD3055-150 - Power MOSFET
(ON Semiconductor)
..
NTD3055−150 Power MOSFET 9.0 A, 60 V
N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies.
NTD3055L104 - N-Channel Power MOSFET
(ON Semiconductor)
MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK
12 A, 60 V
NTD3055L104, NTDV3055L104
Designed for low voltage, high speed switching applications in .
NTD3055L170 - N-Channel Power MOSFET
(ON Semiconductor)
NTD3055L170, NVD3055L170
MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK
9.0 A, 60 V
Designed for low voltage, high speed switching applications i.
NTD30N02 - Power MOSFET
(ON)
NTD30N02 Power MOSFET 30 Amps, 24 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and p.
NTD30N02T4 - Power MOSFET
(ON)
NTD30N02 Power MOSFET 30 Amps, 24 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and p.