NTH4LN061N60S5H
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N-channel power mosfet. The SUPERFET V MOSFET FAST series helps maximize system efficiency by the extremely low switching losses in hard switching applicatio
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NTH4LN067N65S3H - N-Channel MOSFET
(ON Semiconductor)
MOSFET - Power, N-Channel, SUPERFET) III, FAST
650 V, 67 mW, 40 A
NTH4LN067N65S3H
Description SUPERFET III MOSFET is onsemi’s brand−new high voltage
s.
NTH4LN019N65S3H - N-Channel MOSFET
(ON Semiconductor)
MOSFET - Power, N-Channel, SUPERFET) III, FAST
650 V, 19.3 mW, 75 A
NTH4LN019N65S3H
Description SUPERFET III MOSFET is onsemi’s brand−new high voltage.
NTH4LN040N65S3H - N-Channel MOSFET
(ON Semiconductor)
MOSFET - Power, N-Channel, SUPERFET) III, FAST
650 V, 40 mW, 62 A
NTH4LN040N65S3H
Description SUPERFET III MOSFET is onsemi’s brand−new high voltage
s.
NTH4LN095N65S3H - N-Channel Power MOSFET
(ON Semiconductor)
.
NTH4L013N120M3S - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L
NTH4L013N120M3S
Features
• Typ. RDS(on) = 13 mW @ .
NTH4L014N120M3P - SiC MOSFET
(ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L
NTH4L014N120M3P
Features
• Typ. RDS(on) = 14 mW @ VGS = 18 V • Low Switching.
NTH4L015N065SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L
NTH4L015N065SC1
Features
• Typ. RDS(on) = 12 mW @ .
NTH4L020N090SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-4L
V(BR)DSS 900 V
RDS(ON) MAX 28 mW @ 15 V
ID MAX 11.
NTH4L020N120SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
NTH4L020N120SC1
Features
• Typ. RDS(on) = 20 mW •.
NTH4L022N120M3S - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
V(BR)DSS 1200 V
RDS(ON) MAX 30 mW @ 18 V
D
ID M.
