NTMFS4946N Datasheet, mosfet equivalent, ON Semiconductor

NTMFS4946N Features and benefits

NTMFS4946N Application

TAGS

📁 Related Datasheet

NTMFS4941N - Power MOSFET (ON Semiconductor)
NTMFS4941N Power MOSFET Features 30 V, 47 A, Single N−Channel, SO−8 FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize .

NTMFS4943N - Power MOSFET (ON Semiconductor)
NTMFS4943N Power MOSFET Features 30 V, 41 A, Single N−Channel, SO−8 FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize .

NTMFS4945N - Power MOSFET (ON Semiconductor)
NTMFS4945N Power MOSFET Features 30 V, 35 A, Single N−Channel, SO−8 FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize .

NTMFS4921N - Power MOSFET (ON Semiconductor)
NTMFS4921N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 58.5 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimiz.

NTMFS4922NE - Power MOSFET (ON Semiconductor)
NTMFS4922NE Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dr.

NTMFS4925N - Power MOSFET (ON Semiconductor)
NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driv.

NTMFS4925NE - Power MOSFET (ON Semiconductor)
NTMFS4925NE Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize D.

NTMFS4926N - Power MOSFET (ON Semiconductor)
NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri.

NTMFS4926NE - Power MOSFET (ON Semiconductor)
NTMFS4926NE Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize D.

NTMFS4926NT1G - Power MOSFET (ON Semiconductor)
NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri.