NTMFS4H013NF Datasheet - ON Semiconductor

NTMFS4H013NF, Power MOSFET

NTMFS4H013NF Power MOSFET 25 V, 269 A, Single N *Channel, SO *8FL

Features

* Integrated Schottky Diode
* Optimized Design to Minimize Conduction and Switching Losses
* Optimized Package to Minimize Parasitic Inductances
* Optimized material for improved thermal performance
* These Devices are Pb
* Free, Halogen Free/BFR Free an

Applications

* High Performance DC-DC Converters
* System Voltage Rails
* Netcom, Telecom
* Servers & Point of Load MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (T

NTMFS4H013NF-ONSemiconductor.pdf