Part number:
NTMFS4H013NF
Manufacturer:
File Size:
90.51 KB
Description:
Power mosfet.
* Integrated Schottky Diode
* Optimized Design to Minimize Conduction and Switching Losses
* Optimized Package to Minimize Parasitic Inductances
* Optimized material for improved thermal performance
* These Devices are Pb
* Free, Halogen Free/BFR Free an
NTMFS4H013NF Datasheet (90.51 KB)
NTMFS4H013NF
90.51 KB
Power mosfet.
📁 Related Datasheet
NTMFS4H01N - Single N-Channel Power MOSFET
(ON Semiconductor)
NTMFS4H01N Power MOSFET
25 V, 334 A, Single N−Channel, SO−8FL
Features
• • • •
Optimized Design to Minimize Conduction and Switching Losses Optimize.
NTMFS4H01NF - Power MOSFET
(ON Semiconductor)
NTMFS4H01NF
Power MOSFET
25 V, 334 A, Single N−Channel, SO−8FL
Features
• Integrated Schottky Diode • Optimized Design to Minimize Conduction and Sw.
NTMFS4H02N - Power MOSFET
(ON Semiconductor)
NTMFS4H02N
Power MOSFET
25 V, 193 A, Single N−Channel, SO−8FL
Features
• Optimized Design to Minimize Conduction and Switching Losses • Optimized Pac.
NTMFS4H02NF - Power MOSFET
(ON Semiconductor)
NTMFS4H02NF
Power MOSFET
25 V, 193 A, Single N−Channel, SO−8FL
Features
• Integrated Schottky Diode • Optimized Design to Minimize Conduction and Sw.
NTMFS4H11NF - Power MOSFET
(ON Semiconductor)
NTMFS4H11NF
Power MOSFET
25 V, 334 A, Single N−Channel, SO−8FL
Features
• Integrated Schottky Diode • Optimized Design to Minimize Conduction and Sw.
NTMFS4108N - Power MOSFET
(ON Semiconductor)
NTMFS4108N
Power MOSFET
30 V, 35 A, Single N−Channel, SO−8 Flat Lead Package
Features
• Thermally and Electrically Enhanced Packaging Compatible with.
NTMFS4119N - Power MOSFET
(ON Semiconductor)
NTMFS4119N Power MOSFET
30 V, 30 A, Single N-Channel, SO-8 Flat Lead
Features
..
http://onsemi.
ID Max (Note 1) 30 A
•ăLow RDS(o.
NTMFS4120N - Power MOSFET
(ON Semiconductor)
NTMFS4120N Power MOSFET
30 V, 31 A, Single N-Channel, SO-8 Flat Lead
Features
..
http://onsemi.
V(BR)DSS 30 V RDS(on) Typ 3.5 mW .