Description
Silicon Carbide (SiC) Module * EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package NXH020P120MNF1PTG, NXH020P120M.
for pin names
ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet.
Features
* 20 mW/1200 V SiC MOSFET Half Bridge
* Thermistor
* Options with Pre
* applied Thermal Interface Material (TIM) and
without Pre
* applied TIM
* Press
Applications
* Solar Inverter
* Uninterruptible Power Supplies
* Electric Vehicle Charging Stations
* Industrial Power
DATA SHEET www. onsemi. com
PIM18 33.8x42.5 (PRESS FIT) CASE 180BW
MARKING DIAGRAM
NXH020P120MNF1Pxx ATYYWW
NXH020P120MNF1PTG= Specific Device Code
NXH020P120