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NXH80B120H2Q0 Dual Boost Power Module

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Description

Si/SiC Hybrid Module * EliteSiC, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode, Q0 Package NXH80B120H2Q0 The NXH80B120H2Q0 is a high.

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Features

* Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
* 1200 V FSII IGBT VCE(SAT) = 2.2 V
* 1200 V SiC Diode VF = 1.4 V
* Low Inductive Layout
* Solderable Pins
* Thermistor
* Bare Copper and Nickel
* Plated DBC Options Typical Ap

Applications

* Solar Inverter
* Uninterruptible Power Supplies
* Energy Storage Systems 7, 8 D5 Bypass Diode 5,6,15,16 D3 Boost Diode D6 Bypass Diode D4 Boost Diode 13,14 9,10 11,12 T1 Boost IGBT 1 1 D1 IGBT Protection Diode D2 IGBT Protection Diode T2 Boost IGBT 2 20 DATA SH

NXH80B120H2Q0 Distributors

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NXH80B120H2Q0 Dual Boost Power Module ON Semiconductor
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