NXH80B120H2Q0 Datasheet - ON Semiconductor

NXH80B120H2Q0 Dual Boost Power Module

NXH80B120H2Q0 Features

* Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module

* 1200 V FSII IGBT VCE(SAT) = 2.2 V

* 1200 V SiC Diode VF = 1.4 V

* Low Inductive Layout

* Solderable Pins

* Thermistor

* Bare Copper and Nickel

* Plated DBC Options Typical Ap

Datasheet Details

NXH80B120H2Q0

291.00 KB

Dual boost power module.

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