NXH800H120L7QDSG Datasheet - ON Semiconductor

NXH800H120L7QDSG Half-Bridge IGBT

NXH800H120L7QDSG Features

* 1200 V, 800 A 2 in 1 Half Bridge Configuration IGBT Power Module

* Field Stop Trench 7 IGBTs & Gen.7 Diodes

* NTC Thermistor

* Isolated Base Plate

* Solderable Pins

* Low Inductive Layout

* This is a Pb

* Free Device Typical Application

Datasheet Details

NXH800H120L7QDSG

448.06 KB

Half-bridge igbt.

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